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| FRAM | STT-MRAM (NETSOL) | ||
|---|---|---|---|
| Available Density | 16Kb~16Mb | 1Mb~32Mb | High Scalability |
| Operating Frequency | 108MHz | 108MHz | High Speed |
| Endurance | 1013~1014 cycles (read and write) |
1014 cycles *Read : unlimited |
High Endurance |
| Data Retention | 10 years | 20 years | High Retention |
| Density | 128Mb, 256Mb, 512Mb, 1Gb |
|---|---|
| Interface | Single, Dual and Quad SPI with SDR and DDR Octal SPI with SDR and DDR, XIP for read operation |
| Performance | 200MHz, 167MHz |
| Voltage | 1.8V |
| Temperature | -40℃~ 85℃, 105℃, 125℃ |
| Program Time (256 bytes) |
6us (typical) |
| Write Endurance | 106 cycles |
| Retention Time | 10 years@125℃,>20 years@105℃ |
| Process | 14nm FinFET, Samsung Foundry |
| High Retention Quality |
No degradation by write counts No wear leveling at NOR application environment |
|---|---|
| High Performance | About 100~900 times faster than NOR flash(fast program time) |
| Simple software | Higher endurance, No degradation of data retention by write counts No external ECC required (internal ECC is applied) |
| More suitable for Fail Safe |
Higher endurance and retention quality Fast write time, low write energy |
| Density | Process | SPI Mode | Speed | Vcc | Package | Status |
|---|---|---|---|---|---|---|
| 1Mb, 2Mb, 4Mb 8Mb, 16Mb, 32Mb 64Mb |
28nm | Single Dual Quad |
108MHz | 3.3V 1.8V |
8WSON 8SOP 24FBGA 16SOP |
Mass Productiond |
| 32Mb, 64Mb | 28nm | Dual Quad | 150MHz/ 90MHz |
1.8V | 24FBGA | ES |
| Density | Process | SPI Mode | Speed | Vcc | Package | Status |
|---|---|---|---|---|---|---|
| 4Mb, 8Mb, 16Mb 32Mb, 64Mb |
28nm | x8, x16 | 70ns | 3.3V 1.8V |
44TSOP2 54TSOP2 48FBGA |
Mass Production |
| Density | Process | SPI Mode | Speed | Vcc | Package | Status |
|---|---|---|---|---|---|---|
| 1Mb, 2Mb, 4Mb 8Mb, 16Mb, 32Mb |
55nm | x8,x16 | 8ns 10ns 12ns |
1.8V, 2.5V 3.3V |
44TSOP2 48TSOP1 48FBGA |
Mass Production |
| Density | 1Mb, 2Mb, 4Mb, 8Mb, 16Mb, 32Mb, 64Mb |
|---|---|
| Interface | Single, Dual, Quad and Dual Quad SPI with SDR and DDR XIP for read and write operations Non-volatile registers |
| Performance | 108MHz(54MBps)/133MHz(67MBps) 150MHz(150MBps, Max 180MBps) |
| Operating Voltage | 3.3V, 1.8V |
| Operating Temperature |
-40℃~105℃ |
| Low power consumption |
Standby current : 330uA (3.3V), 280uA (1.8V) Deep power down current : 80uA (3.3V), 25uA (1.8V) Read current : 8mA (3.3V), 6mA (1.8V) Write current : 25mA (3.3V), 22mA (1.8V) |
| Process | 28nm FDSOI STT-MRAM, Samsung Foundry |
| Reliability | Data Retention : 20 years Read Endurance : unlimited Write Endurance : Virtually unlimited,1014 No external ECC required. |
| Package Type | 8WSON, 8SOP, 16SOP, 24FBGA |
| Compatibility | FRAM, NOR Flash, nvSRAM, MRAM |
| Density | 4Mb, 8Mb, 16Mb, 32Mb, 64Mb |
|---|---|
| Interface | Parallel asynchronous interface page mode function for high performance |
| Performance | Interpage/Intrapage read access : 70ns/15ns Interpage/Intrapage write access : 240ns/15ns |
| Operating Voltage | 3.3V, 1.8V |
| Operating Temperature |
-40℃~85℃ |
| Low power consumption |
Standby current : 350uA (3.3V), 300uA (1.8V) Read current : 14mA (3.3V), 10mA (1.8V) Write current : 16mA (3.3V), 15mA (1.8V) |
| Process | 28nm FDSOI STT-MRAM, Samsung Foundry |
| Reliability | Data Retention : 10 years Read Endurance : unlimited Write Endurance : Virtually unlimited, 1014 No external ECC required |
| Package Type | 48FBGA, 54TSOP2, 44TSOP2 |
| Compatibility | FRAM, Low-power SRAM, nvSRAM, MRAM |
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